Solid-state imaging device, method of manufacturing solid-state imaging device, and imaging apparatus

ABSTRACT

There is provided a solid-state imaging device including a semiconductor substrate having an effective region in which a photodiode performing a photoelectric conversion is formed and, an optical black region shielded by a light shielding film; a first film which is formed on the effective region and in which at least one layer or more of layers having a negative fixed charge are laminated; and a second film which is formed on the light shielding region and in which at least one layer or more of layers having a negative fixed charge are laminated, in which the number of layers formed in the first film is different from the number of layers formed in the second film.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/402,257, filed Feb. 22, 2012, which claims priority to JapanesePatent Application JP 2011-053237, filed in the Japan Patent Office onMar. 10, 2011, the entire disclosures of which are hereby incorporatedherein by reference.

BACKGROUND

The present disclosure relates to a solid-state imaging device, a methodof manufacturing the solid-state imaging device, and an imagingapparatus.

In a solid-state imaging device of a CCD (Charge Coupled Device) type ora CMOS (Complementary Metal Oxide Semiconductor) type, it is understoodthat a crystal defect in a photodiode, or an interface state at aninterface between a light sensing portion formed in a semiconductorsubstrate and an insulation layer thereon causes a dark current.

Therefore, as a technology of suppressing the occurrence of the darkcurrent, a technology in which a film having a negative fixed charge isformed on an entire surface of a semiconductor substrate, for example, alight sensing pixel region (hereinafter, referred to as an “effectiveregion”) and an optical black region (hereinafter, referred to as an “OBregion”) is suggested. In this technology, the film having a negativefixed charge is formed on the semiconductor substrate, and a positivecharge (hole) is stored in the vicinity of an interface between thelight sensing portion and the insulation layer, such that occurrence ofthe dark current caused by the interface state is suppressed.

Japanese Unexamined Patent Application Publication No. 2010-239116 is anexample of the related art.

SUMMARY

However, in regard to the dark current caused by the interface state, anamount of the dark current thereof is different between the effectiveregion and the OB region. Therefore, in a case where the above-describedfilm having a negative fixed charge is formed on the entire surface ofthe semiconductor substrate, a total amount of dark current decreases,but a difference in the dark current between the effective region andthe OB region occurs, such that there is a problem in that a so-calledOB difference in level occurs.

It is desirable to provide a solid-state imaging device, a method ofmanufacturing the solid-state imaging device, and an imaging apparatus,in which the difference between a dark current in an effective regionand a dark current in an optical black region may be small and thereby aso-called OB difference in level may be improved.

According to an embodiment of the present disclosure, there is provideda solid-state imaging device including a semiconductor substrate havingan effective region in which a photodiode performing a photoelectricconversion is formed and, an optical black region shielded by a lightshielding film; a first film which is formed on the effective region andin which at least one layer or more of layers having a negative fixedcharge are laminated; and a second film which is formed on the opticalblack region and in which at least one layer or more of layers having anegative fixed charge are laminated, in which the number of layersformed in the first film is different from the number of layers formedin the second film.

In the solid-state imaging device, the first film may include a firstlayer that is formed on the semiconductor substrate using an atomiclayer vapor deposition method or a metal organic chemical vapordeposition method, a second layer that is formed on the first layerusing the atomic layer vapor deposition method or the metal organicchemical vapor deposition method, and a third layer that is formed onthe second layer using a physical vapor deposition. The second film mayinclude a first layer that is formed on the semiconductor substrateusing the atomic layer vapor deposition method or the metal organicchemical vapor deposition method, and a second layer that is formed onthe first layer using the physical vapor deposition.

In addition, in the solid-state imaging device, the first film mayinclude a first layer that is formed on the semiconductor substrateusing an atomic layer vapor deposition method or a metal organicchemical vapor deposition method, a second layer that is formed on thefirst layer using a physical vapor deposition. The second film mayinclude a first layer that is formed on the semiconductor substrateusing the atomic layer vapor deposition method or the metal organicchemical vapor deposition method, a second layer that is formed on thefirst layer using the physical vapor deposition, and a third layer thatis formed on the second layer using the atomic layer vapor depositionmethod or the metal organic chemical vapor deposition method.

In addition, in the solid-state imaging device, the first film mayinclude a first layer that is formed on the semiconductor substrateusing an atomic layer vapor deposition method or a metal organicchemical vapor deposition method, a second layer that is formed on thefirst layer using a physical vapor deposition, and a third layer that isformed on the second layer using the atomic layer vapor depositionmethod or the metal organic chemical vapor deposition method. The secondfilm may include a first layer that is formed on the semiconductorsubstrate using an atomic layer vapor deposition method or a metalorganic chemical vapor deposition method.

In addition, in the solid-state imaging device, the layers making up thefirst film and the second film may be formed of any one of a hafniumoxide film, an aluminum oxide film, a zirconium oxide film, a tantalumoxide film, and a titanium oxide film.

According to another embodiment of the present disclosure, there isprovided a method of manufacturing a solid-state imaging device. Themethod includes forming an effective region in which a photodiodeperforming a photoelectric conversion is formed, and an optical blackregion shielded by a light shielding film in a semiconductor substrate;forming a first film, in which at least one layer or more of layershaving a negative fixed charge are laminated, on the effective region;and forming a second film, in which at least one layer or more of layershaving a negative fixed charge are laminated and the number of layers isdifferent from the number of layers formed in the first film, on theoptical black region.

According to still another embodiment of the present disclosure, thereis provided an imaging apparatus including the solid-state imagingdevice; an optical system that images an image of a subject on thesolid-state imaging device; a driving unit that generates a drivingpulse that allows the solid-state imaging device to operate; and asignal processing circuit that processes an output image signal from thesolid-state imaging device.

According to the embodiments of the present disclosure, it is possibleto make the difference between a dark current in an effective region anda dark current in an optical black region small, and therefore it ispossible to improve a so-called OB difference in level.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a cross-sectional structure of asolid-state imaging device according to an embodiment of the presentdisclosure;

FIGS. 2A to 2C are diagrams illustrating a relationship between athickness of a film having a negative fixed charge and an amount of darkcurrent;

FIGS. 3A to 3E are diagrams illustrating a method of manufacturing thesolid-state imaging device according to the embodiment of the presentdisclosure;

FIG. 4 is a diagram illustrating a configuration of an imaging apparatusincluding the solid-state imaging device according to the embodiment ofthe present disclosure;

FIG. 5 is a diagram illustrating a cross-sectional structure of asolid-state imaging device according to a first modification;

FIGS. 6A to 6E are diagrams illustrating a method of manufacturing thesolid-state imaging device according to the first modification;

FIG. 7 is a diagram illustrating a relationship between a thickness of afilm having a negative fixed charge and an amount of dark current;

FIG. 8 is a diagram illustrating a cross-sectional structure of asolid-state imaging device according to a second modification;

FIGS. 9A to 9E are diagrams illustrating a method of manufacturing thesolid-state imaging device according to the second modification; and

FIG. 10 is a diagram illustrating a relationship between a thickness ofa film having a negative fixed charge and an amount of dark current.

DETAILED DESCRIPTION OF EMBODIMENTS

In a solid-state imaging device according to an embodiment of thepresent disclosure, a first film (hereinafter, referred to as a “firstfilm”) having a negative fixed charge is formed on an effective regionin which a photodiode is formed in a semiconductor substrate of thesolid-state imaging device, and a second film (hereinafter, referred toas a “second film”) which has a negative fixed charge and in which thenumber of laminated layers is different from the first film is formed onan optical black region that is shielded by a light shielding film.

For example, the first film includes a first layer that is formed on thesemiconductor substrate, a second layer that is formed on the firstlayer, and a third layer that is formed on the second layer.

The first layer and the second layer, which make up the first film, areformed by an ALD (Atomic Layer Deposition) method or a MOCVD (MetalOrganic Chemical Vapor Deposition) method. In addition, the third layerthat makes up the first film is formed by a PVD (Physical VaporDeposition) method.

In addition, the second film includes, for example, a first layer formedon a semiconductor substrate, and a second layer formed on the firstlayer. The first layer making up the second film is formed using the ALDmethod or the MOCVD method. In addition, the second layer making up thesecond film is formed by the PVD method.

As a material of the layer making up the first film and the second film,for example, oxides such as a hafnium oxide (HfO₂), an aluminum oxide(Al₂O₃), zirconium oxide (ZrO₂), a tantalum oxide (Ta₂O₅), and atitanium oxide (TiO₂) may be exemplified. Since the layers of theseoxides are used for a gate insulation film of an insulation gate-typefield effect transistor, or the like, a formation method is established,such that it is possible to easily form the layers.

In addition, among these materials, particularly, in a case where thehafnium oxide (refraction index: 2.05), the tantalum oxide (refractionindex: 2.16), the titanium oxide (refraction index: 2.20), or the like,which has a relatively high refraction index, is used, it is alsopossible to obtain a reflection prevention effect.

As materials other than the above-described materials, for example, eachoxide of rare-earth elements may be exemplified. That is, each oxide oflanthanum, praseodymium, cerium, neodymium, promethium, samarium,europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium,ytterbium, lutetium, and yttrium may be exemplified.

Furthermore, a hafnium nitride, an aluminum nitride, a hafniumoxynitride, and an aluminum oxynitride may be used.

Silicon (Si) or nitrogen (N) may be added in the first layer, the secondlayer, and the third layer that have a negative fixed charge within arange not deteriorating an insulation property. In this case, aconcentration of silicon or nitrogen is appropriately determined withina range at which an insulation property of the layers is notdeteriorated. In this manner, due to the addition of silicon ornitrogen, heat resistance of respective layers or ion implantationpreventing capability during processes may be improved.

The first and second layers making up the first film, and the firstlayer making up the second film are formed using the ALD method or theMOCVD method as described above. In the case of forming the first filmby the ALD method, as conditions, for example, the temperature of asubstrate is set to 200 to 500° C., the flow rate of a precursor is setto 10 to 500 sccm, the irradiation time of the precursor is set to 1 to15 seconds, and the flow rate of O₃ is set to 5 to 50 sccm. For example,in the case of forming the first film by the MOCVD method, for example,the temperature of the substrate is set to 200 to 600° C. as acondition.

In addition, in a case where the semiconductor substrate is a siliconlayer, and the first layer making up the first film or the first layermaking up the second film is formed on the semiconductor substrate bythe ALD method, it is possible to form a silicon oxide film, whichreduces an interface state, on a surface of the silicon layer with athickness of substantially 1 nm.

The second layer making up the first film is formed using the ALD methodor the MOCVD method as described above. In the case of forming thesecond layer making up the first film by the ALD method, as conditions,for example, the temperature of a substrate is set to 200 to 500° C.,the flow rate of a precursor is set to 10 to 500 sccm, the irradiationtime of the precursor is set to 1 to 15 seconds, and the flow rate of O₃is set to 5 to 50 sccm. For example, in the case of forming the secondlayer making up the first film by the MOCVD method, for example, thetemperature of the substrate is set to 200 to 600° C. as a condition.

In addition, the third layer making up the first film and the secondlayer making up the second film are formed using the PVD method asdescribed above. In the case of forming the third layer making up thefirst film and the second layer making up the second film by the PVDmethod, as conditions, for example, pressure is set to 0.01 to 50 Pa,power is set to 500 to 2000 W, the flow rate of Ar is set to 5 to 50sccm, and the flow rate of O₂ is set to 5 to 50 sccm.

Since the third layer making up the first film and the second layermaking up the second film are formed by the PVD method, formation speedis faster compared to the ALD method or the MOCVD method, such that itis possible to form a film that is thick to some degree within a shorttime.

The film thickness of the second layer making up the first film, thefilm thickness of the first layer making up the second film are notparticularly limited, but it is necessary that the second layer makingup the first film and the first layer making up the second film have athickness of some degree or more so as not to cause damage to thesemiconductor substrate when forming the third layer making up the firstfilm, and the second layer making up the second film by the PVD method.Preferably, the film thickness of the first film is set to 1 nm or more.

In addition, since the second layer making up the first film and thefirst layer making up the second film are formed by the ALD method orthe MOCVD method, it takes time to form a thick layer. Therefore, it ispreferable that the thickness of the second layer making up the firstfilm and the first layer making up the second film be substantially 5 nmor less.

Since the solid-state imaging device according to an embodiment of thepresent disclosure includes the first film in which above the effectiveregion, the second layer is formed on the first layer and the thirdlayer is formed on the second layer, a sufficient negative bias effectmay be obtained in accordance with the three layers. In addition, sincethe solid-state imaging device includes the second film in which abovethe OB region, the second layer is formed on the first layer, asufficient negative bias effect may be obtained in accordance with thetwo layers.

Particularly, since the film structure between the first film in theeffective region and the second film in the OB region are made to bedifferent, a difference between a dark current in the effective regionand a dark current in the OB region is made to be small, and thereby aso-called OB difference in level may be improved. In addition, due to afilm thickness dependency of the amount of dark current, the film havinga negative fixed charge, it is possible to adjust the OB difference inlevel by adjusting the film thickness in accordance with the amount ofdark current of each solid-state imaging device.

In addition, since it is possible to separately change the filmthickness of the first film in the effective region and the filmthickness of the second film in the OB region, in the case of sensinglight from the first film side, in regard to a light sensing pixelsection, it is possible to select an optimal film thickness of the filmhaving a negative fixed charge as a reflection prevention film.

In addition, in the OB region, it is not necessary to consider incidenceof light, such that it is possible to adjust the film thickness of thesecond film by only ameliorating the dark current, apart from the effectof the reflection prevention film.

In addition, since the second layer making up the first film and thefirst layer making up the second film are formed using the ALD method orthe MOCVD method, damage may not be caused to the semiconductorsubstrate when forming the second layer making up the first film and thefirst layer making up the second film.

As described above, according to the embodiment of the presentdisclosure, it is possible to separately adjust the film thickness ofthe first film and the film thickness of the second film. Therefore, itis possible for the film thickness of the first film to be an optimalfilm thickness exhibiting a function of the reflection prevention film.

In addition, since light is not incident to the optical black region, itis not necessary for the second film to have the function of thereflection prevention film, such that it is possible for the filmthickness of the second film to be an optimal film thickness toameliorate the dark current.

Hereinafter, the solid-state imaging device according to an embodimentof the present disclosure will be described with reference to theattached drawings. In respective drawings, like reference numerals willbe given to like parts having substantially the same functions. Inaddition, the description will be made in the following order.

1. Configuration of Solid-State Imaging Device

2. Method of Manufacturing Solid-State Imaging Device

3. Configuration of Imaging Apparatus, or the like

4. Other Configuration and Method of Manufacturing Solid-State ImagingDevice

1. Configuration of Solid-State Imaging Device

First, a configuration of the solid-state imaging device 1 according toan embodiment of the present disclosure will be described with referenceto FIG. 1. FIG. 1 shows a diagram illustrating a cross-sectionalstructure of the solid-state imaging device according to thisembodiment. In addition, in this embodiment, an example in which thepresent disclosure is applied to a so-called rear surface irradiationtype CMOS solid-state imaging device (CMOS image sensor) will bedescribed.

In the solid-state imaging device 1, a charge storage region 4, whichserves as a photodiode as a light sensing portion that performs aphotoelectric conversion of incident light, is formed of an N-typeimpurity region at an effective region 21 and an OB region 22 in asemiconductor substrate 2. On a surface of the charge storage region 4,a positive charge storage region 5 a or 5 b is formed, and an HAD(Hole-Accumulation Diode Sensor) is configured by the charge storageregion 4 and the positive charge storage region 5 a or 5 b. In addition,each of the charge storage region 4 and the positive charge storageregion 5 a or 5 b is isolated by an isolation region 3.

In a surface side of the semiconductor substrate 2, a gate electrode 11of a MOS transistor Tr is formed under the charge storage region 4 ofthe semiconductor substrate 2, and an interconnection layer 12 of ametallic interconnection is formed further under the charge storageregion 4.

The gate electrode 11 and the interconnection layer 12 of each layer areinsulated by an interlayer insulation layer 13. In addition, theinsulation layer 13 is supported by a supporting substrate that isprovided at a lower side (not shown), or the like.

The photodiode having the charge storage region 4 makes up each pixel.Each pixel includes one or more of transistors including the MOStransistor (in this case, a transmission transistor that reads out andtransmits the charge stored in the charge storage region 4) Tr.

Each charge storage region 4 of each pixel is isolated by the P-typeisolation region 3. In addition, although not shown, it is preferablethat a p+ semiconductor region be formed at a gate electrode 11 sideinterface of the MOS transistor Tr of the charge storage region 4 tosuppress occurrence of the dark current at the interface with theinsulation layer 13.

In a rear surface side of the semiconductor substrate 2, a first film(hereinafter, referred to as a “first film”) 31 that has a negativefixed charge is formed on an upper layer of the effective region 21. Thefirst film 31 has a configuration in which a first layer 31 a formed onthe semiconductor substrate 2, a second layer 31 b formed on the firstlayer 31 a, and a third layer 31 c formed on the second layer 31 b arelaminated.

For example, the first layer 31 a has any one of the hafnium oxide film,the aluminum oxide film, the zirconium oxide film, the tantalum oxidefilm, and the titanium oxide film, and is formed by the ALD method orthe MOCVD method.

In addition, the second layer 31 b has at any one of the hafnium oxidefilm, the aluminum oxide film, the zirconium oxide film, the tantalumoxide film, and the titanium oxide film, and is formed by the ALD methodor the MOCVD method.

Both of the first layer 31 a and the second layer 31 b are formed by theALD method or the MOCVD method, the first layer 31 a and the secondlayer 31 b are also collectively referred to as ALD layers.

In addition, the third layer 31 c has any one of the hafnium oxide film,the aluminum oxide film, the zirconium oxide film, the tantalum oxidefilm, and the titanium oxide film, and is formed by the PVD method.Therefore, the third layer 31 c is also referred to as a PVD layer.

In this manner, the first film 31 in which the first layer 31 a, thesecond layer 31 b, and the third layer 31 c, which have a negative fixedcharge, are laminated is formed on an upper layer of the effectiveregion 21. An electric field is added to a surface of the charge storageregion 4 due to the negative fixed charge in the first film 31, andtherefore the positive charge storage region 5 a is formed on thesurface of the charge storage region 4. Therefore, even when an ion isnot implanted in the surface of the charge storage region 4, it ispossible to form the positive charge storage region 5 a.

An insulation film 6 a formed of, for example, a silicon oxide (SiO₂)film is formed on the first film 31, and a planarization film 8 a isformed on the insulation film 6 a. In addition, for each pixel, colorfilters 9 of corresponding colors (red R, green G, and blue B) areformed on the planarization film 8 a, and an on-chip lens 10 forcondensing is provided on each of the color filters 9.

A second film (hereinafter, referred to as a “second film”) 32 having anegative fixed charge is formed on an upper layer of the OB region 22.The second film 32 has a configuration in which a first layer 32 bformed on the semiconductor substrate 2 and a second layer 32 c formedon the first layer 32 b are laminated.

The first layer 32 b includes, for example, any one of the hafnium oxidefilm, the aluminum oxide film, the zirconium oxide film, the tantalumoxide film, and the titanium oxide film, and is formed by the ALD methodor the MOCVD method. Therefore, the first layer 32 b is also referred toas an ALD layer.

The second layer 32 c includes, for example, any one of the hafniumoxide film, the aluminum oxide film, the zirconium oxide film, thetantalum oxide film, and the titanium oxide film, and is formed by thePVD method. Therefore, the second layer 32 c is also referred to as aPVD layer.

In this manner, the second film 32 in which the first layer 32 b and thesecond layer 32 c, which have a negative fixed charge, are laminated isformed on an upper layer of the OB region 22, such that an electricfield is added to a surface of the charge storage region 4 due to thenegative fixed charge in the second film 32, and the positive chargestorage region 5 is formed on the surface of the charge storage region4. Therefore, even when an ion is not implanted in the surface of thecharge storage region 4, it is possible to form the positive chargestorage region 5 b.

An insulation film 6 b formed of, for example, a silicon oxide (SiO₂)film is formed on the second film 32, and a light shielding film 7 isformed on the insulation film 6 b to cover the OB region 22. Due to thislight shielding film 7, a region (optical black region (not shown)) inwhich light is not incident to a photodiode is formed, and the blacklevel in an image may be determined by an output of the photodiode.

As described above, the first film 31 has a lamination structure ofthree layers, and the second film 32 has a lamination structure of twolayers. In this manner, in the solid-state imaging device 1, the numberof layers of the first film 31 is different from the number of layers ofthe second film 32. In this embodiment, the number of layers of thefirst film 31 is larger than the number of layers of the second film 32,and the film thickness of the first film 31 is larger than that of thesecond film 32. However, the difference (difference in level) betweenthe film thickness of the first film 31 and the film thickness of thesecond film 32 is substantially several nm. This degree of difference inlevel may be absorbed by forming insulation films 6 a and 6 b orplanarization films 8 a and 8 b on the first film 31 and the second film32 as described below, such that the color filters 9 or the like of thesolid-state imaging device 1 may be formed on a flat film.

The planarization film 8 b is formed to cover the insulation film 6 band the light shielding film 7.

In the solid-state imaging device 1 according to this embodiment of thepresent disclosure, when light is incident from an upper side of FIG. 1,a photoelectric conversion to convert the light into a signal chargeoccurs in the charge storage region 4 of the photodiode, such that theincident light may be sensed and detected. In addition, the solid-stateimaging device 1 has a so-called rear surface irradiation type structurein which when seen from the semiconductor substrate 2 in which thephotodiode is formed, light is made to be incident from an upper layerof a side (rear surface side) opposite to a side (front surface side) ofthe interconnection layer 12 formed in a lower layer.

Particularly, in the solid-state imaging device 1, since the first film31 is formed on the effective region 21, and the second film 32 isformed on the OB region 22, a reduction in the dark current in theeffective region 21 and a reduction in the dark current in the OB region22 may be performed individually. Therefore, as shown in FIG. 7, it ispossible to reduce the difference in the amount of dark current betweenthe effective region 21 and the OB region 22, such that it is possibleto suppress occurrence of the so-called OB difference in level.

In the solid-state imaging device 1 according to this embodiment,particularly, the first film 31 in the effective region 21 has alamination structure of three layers including the first layer 31 a, thesecond layer 31 b formed on the first layer 31 a, and the third layer 31c formed on the second layer 31 b. In addition, the second film 32 inthe OB region 22 has a lamination structure of two layers including thefirst layer 32 b and the second layer 32 c formed on the first layer 32b.

In the first film 31, the first layer 31 a and the second layer 31 b areformed by the ALD method or the MOCVD method, and the third layer 31 cis formed by the PVD method. In addition, in the second film 32, thefirst layer 32 b is formed by the ALD method or the MOCVD method, andthe second layer 32 c is formed by the PVD method.

As the material of the first layer 31 a, the second layer 31 b, and thethird layer 31 c, which make up the first film 31, for example, any oneof the hafnium oxide, the aluminum oxide, the zirconium oxide, thetantalum oxide, and the titanium oxide may be used. In addition, theabove-described nitride or oxynitride, oxides of rare-earth elements, orthe like may be used.

In addition, as a material of the first layer 32 b and the second layer32 c that make up the second film 32, for example, any one of thehafnium oxide, the aluminum oxide, the zirconium oxide, the tantalumoxide, and the titanium oxide may be used. In addition, theabove-described nitride or oxynitride, oxides of rare-earth elements, orthe like may be used.

When the first film 31 and the second film 32 are provided on an upperlayer of the semiconductor substrate 2, it is possible to store apositive charge (hole) in the vicinity of an interface. In addition,particularly, when an oxide film such as the hafnium oxide film, thetantalum oxide film, and the titanium oxide film, which has a relativelyhigh refraction index, is formed as the first film 31, it is alsopossible to obtain the reflection prevention effect.

FIGS. 2A to 2C illustrate a relationship between the film thickness ofthe films 31 and 32 that have a negative fixed charge and the amount ofdark current. FIG. 2A shows a diagram illustrating a relationshipbetween the thickness of the ALD layer and the amount of dark current,and FIGS. 2B and 2C show diagrams illustrating a relationship betweenthe thickness of the PVD layer and the amount of dark current. As shownin FIGS. 2B and 2C, the amount of dark current does not depend on thefilm thickness of the PVD layer, and as shown in FIG. 2A, the amount ofdark current depends on the thickness of the ALD layer.

As shown in FIG. 2A, the amount of dark current in the effective regionis larger than that in the OB region. In addition, when the thickness ofthe ALD layer together with the first film 31 and the second film 32 ismade to be small, the amount of dark current decreases. In thesolid-state imaging device until now, the films are formed on thesemiconductor substrate 2 in such a manner that the thickness of the ALDlayer in the effective region and the OB region are equal to each other.Therefore, a predetermined difference (OB difference in level) or morein the amount of dark current between the effective region and the OBregion occurs, and the more the film thickness increases, the furtherthe difference increases.

On the other hand, in the solid-state imaging device 1 according to thisembodiment, the thickness of the ALD layer of the effective region, inwhich the amount of dark current is large, is set to be larger than thatof the ALD layer in the OB region. Therefore, the difference between theamount of dark current in the effective region and the amount of darkcurrent in the OB region decreases.

2. Method of Manufacturing Solid-State Imaging Device

Next, a method of manufacturing the solid-state imaging device 1according to this embodiment will be described. FIGS. 3A to 3E showdiagrams illustrating the method of manufacturing the solid-stateimaging device 1. In addition, the following description will be startedfrom a state in which the charge storage region 4 is formed in thesemiconductor substrate 2 of the effective region 21, and the gateelectrode 11 and the interconnection layer 12 of the MOS transistor Trare formed.

First, as shown in FIG. 3A, a hafnium oxide film as a film 33 a having anegative fixed charge is formed on the effective region 21 and the OBregion 22 of the semiconductor substrate 2 by the ALD method or theMOCVD method. In addition, as a material of the film 33 a having anegative fixed charge, in addition to the above-described hafnium oxide,for example, any one of the aluminum oxide, the zirconium oxide, thetantalum oxide, and the titanium oxide may be used.

Formation conditions in the case of the ALD method are as follows. Forexample, a temperature of a formation substrate is set to 200 to 500°C., a flow rate of a precursor is set to 10 to 500 sccm, an irradiationtime is set to 1 to 15 seconds, and a flow rate of O₃ is set to 10 to500 sccm. In addition, the film thickness of the film 33 a having anegative fixed charge is preferably 1 nm or more.

Next, as shown in FIG. 3B, a resist 40 is formed on the film 33 a havinga negative fixed charge in the effective region 21, and then the resist40 and an exposed portion of the film 33 a having a negative fixedcharge are removed by wet etching. Due to this, as shown in FIG. 3C, thefirst layer 31 a making up the first film 31 is formed on the effectiveregion 21 of the semiconductor substrate 2.

Next, as shown in FIG. 3D, a hafnium oxide film as a film 34 having anegative fixed charge is formed on the first layer 31 a and the OBregion 22 by the ALD method or the MOCVD method. Therefore, the secondlayer 31 b is formed on the first layer 31 a, and the first layer 32 bof the second film 32 is formed on the OB region 22. In addition, as amaterial of the film 34 having a negative fixed charge, in addition tothe above-described hafnium oxide, for example, any one of the aluminumoxide, the zirconium oxide, the tantalum oxide, and the titanium oxidemay be used.

In addition, formation conditions in the case of the ALD method are asfollows. For example, the temperature of a formation substrate is set to200 to 500° C., the flow rate of a precursor is set to 10 to 500 sccm,the irradiation time is set to 1 to 15 seconds, and the flow rate of O₃is set to 10 to 500 sccm.

Next, as shown in FIG. 3E, a tantalum oxide film as a film 35 having anegative fixed charge is formed on the second layer 31 b of the firstfilm 31 and the first layer 32 b of the second film 32 by the PVDmethod. Therefore, the third layer 31 c is formed on the second layer 31b, and the second layer 32 c is formed on the first layer 32 b. Inaddition, as a material of the film 35 having a negative fixed charge,in addition to the above-described tantalum oxide, for example, any oneof the hafnium oxide, the aluminum oxide, the zirconium oxide, and thetitanium oxide may be used.

In addition, formation conditions in the case of the PVD method are asfollows. For example, pressure is set to 0.01 to 50 Pa, DC power is setto 500 to 2000 W, the flow rate of Ar is set to 5 to 50 sccm, and theflow rate of O₂ is set to 5 to 50 sccm.

Through the processes shown in FIGS. 3A to 3E, the first film 31 and thesecond film 32 that are characteristic configurations of the solid-stateimaging device 1 are formed. In this manner, the second layer 31 b ofthe first film 31 and the first layer 32 b of the second film 32 areintegrally formed by forming the film 34. In addition, the third layer31 c of the first film 31 and the second layer 32 c of the second film32 are integrally formed by forming the film 35.

Next, although not shown, the insulation films 6 a and 6 b formed ofsilicon oxide are formed on the first film 31 and the second film 32 bythe PVD method. Specifically, the insulation film 6 a is formed on thethird layer 31 c of the first film 31, and the insulation film 6 b isformed on the second layer 32 c of the second film 32.

In addition, when the insulation film 6 b is formed in the OB region 22,it is possible to prevent a surface of the second layer 32 c of thesecond film 32 from being directly exposed at the time of etching thethick light shielding film 7. In addition, it is possible to suppress areaction between the second layer 32 c of the second film 32 and thelight shielding film 7, which is caused by a direct contact between thesecond layer 32 c of the second film 32 and the light shielding film 7.

Next, although not shown, the light shielding film 7 is formed on theinsulation film 6 b. Specifically, a metallic film serving as the lightshielding film 7 is formed on the insulation films 6 a and 6 b by thePVD method. Subsequently, a resist is formed on the metallic film on theinsulation 6 a, and then the resist and an exposed portion of themetallic film is removed by etching. In this manner, the light shieldingfilm 7 is formed on the insulation film 6 b.

Next, although not shown, a silicon oxide film as the planarizationfilms 8 a and 8 b is formed to cover the insulation film 6 a and thelight shielding film 7 by an application method. When the planarizationfilms 8 a and 8 b are formed to have a sufficient thickness, thedifference in level due to the light shielding film 7 may disappear,such that the surface may be planarized.

Finally, although not shown, the color filters 9 and the on-chip lenses10 are formed sequentially on the planarization film 8 a in theeffective region 21, that is, at an upper side of the photodiode of eachpixel. In addition, a light transmitting insulation film (not shown) maybe formed between the color filters 9 and the on-chip lenses 10 for theprevention of processing damage to the color filters 9 at the time ofprocessing lenses.

Through the above-described processes, the solid-state imaging device 1shown in FIG. 1 is manufactured. In this manner, in the method ofmanufacturing the solid-state imaging device according to thisembodiment, since the first film 31 is formed on the effective region21, the positive charge storage region 5 a is formed on the surface ofthe charge storage region 4 in the effective region 21. Due to thepositive charge storage region 5 a, the occurrence of dark current onthe surface of the charge storage region 4 in the effective region 21 issuppressed.

In addition, since the second film 32 is formed on the OB region 22, thepositive charge storage region 5 b is formed on the surface of thecharge storage region 4 in the OB region 22. Due to the positive chargestorage region 5 b, the occurrence of the dark current on the surface ofthe charge storage region 4 in the OB region 22 is suppressed.

Furthermore, in the solid-state imaging device 1, since the first film31 and the second film 32 are separately formed, and have different filmconfigurations and film thicknesses, it is possible to make thedifference in the amount of dark current between the effective region 21and the OB region 22 small. Therefore, a so-called OB difference inlevel may be improved.

In addition, since the first film 31 and the second film 32 areseparately formed, the first film in the effective region may have afilm structure and a film thickness that is optimal for a reflectionprevention film. In addition, since it is not necessary to consider theincidence of light in the OB region, the second film 32 may have a filmconfiguration that is specialized for amelioration of dark current.

The first film 31 may obtain a sufficient negative bias effect inaccordance with the three layers of the first layer 31 a, the secondlayer 31 b, and the third layer 31 c. In addition, the second film 32may obtain a sufficient negative bias effect in accordance with the twolayers of the first layer 32 b and the second layer 32 c. Due to thenegative fixed charge, the positive charge storage region 5 a is formedin the vicinity of an interface in order for a positive charge (hole) tobe stored, and therefore the occurrence of the dark current caused by aninterface state may be suppressed.

Therefore, according to this embodiment, since the occurrence of thedark current that is caused by the interface state may be suppressed dueto the sufficient negative bias effect, it is possible to realize thesolid-state imaging device 1 having high reliability, which stablyoperates without causing dark current to occur.

In the above-described embodiment, an example in which the presentdisclosure is applied to the CMOS solid-state imaging device isdescribed, but the present disclosure may be applicable to solid-stateimaging devices having other configurations. For example, the presentdisclosure is applicable to a CCD solid-state imaging device, and it ispossible to suppress the occurrence of dark current caused by theinterface state by forming a silicon oxide film formed using plasma anda film having a negative fixed charge on a light sensing portion.

In addition, in the above-described embodiment, the present disclosureis applied to the solid-state imaging device having a rear surfaceirradiation type structure. However, the present disclosure isapplicable to a solid-state imaging device having a so-called frontsurface irradiation type structure in which an interconnection layer anda transmission electrode are formed at light incidence side of thesemiconductor substrate on which the photodiode is formed.

3. Configuration of Imaging Apparatus, or the Like

Hereinafter, an imaging apparatus including the solid-state imagingdevice 1 configured as described will be described. FIG. 4 shows adiagram illustrating a configuration of the imaging apparatus includingthe solid-state imaging device 1. In addition, as the imaging apparatus90, for example, a video camera, a digital still camera, a camera of acellular phone, or the like may be exemplified.

As shown in FIG. 4, the imaging apparatus 90 includes an optical block91, the solid-state imaging device 1, an A/D (analog/digital) convertingcircuit 92, a signal processing circuit 93, a system controller 94 as acontrol unit, and an input unit 95. In addition, a driver 96 that allowsa mechanism in the optical block 91 to operate, a timing generator(hereinafter, referred to as “TG”) 97 as a driving unit generating adriving pulse that allows the solid-state imaging device 1 to operate,and the like are provided in the imaging apparatus 90.

The optical block 91 includes a lens that condenses light from a subjectto the solid-state imaging device 1, a driving mechanism that moves thelens so as to perform a focus adjustment and zooming, a mechanicalshutter, an aperture stop, or the like. The driver 96 controls anoperation of the mechanism in the optical block 91 in response to acontrol signal transmitted from the system controller 94.

The solid-state imaging device 1 operates on the basis of the drivingpulse generated by the TG 97 and converts the incident light from thesubject to an electrical signal. The TG 97 generates the driving pulseunder the control of the system controller 94.

The A/D converting circuit 92 performs A/D conversion of an image signaloutput from the solid-state imaging device 1 and outputs a digital imagesignal.

The signal processing circuit 93 performs various camera signalprocessing such as an AF (Auto Focus), an AE (Auto Exposure), aninterpolation processing of a defective pixel, or the like with respectto the digital image signal transmitted from the A/D converting circuit92.

The system controller 94 includes, for example, a CPU (CentralProcessing Unit), a ROM (Read Only Memory), a RAM (Random AccessMemory), or the like. The CPU is a unit to execute a program stored inthe ROM or the like. The CPU generally controls each unit of the imagingapparatus, and performs various calculations for the control. The inputunit 95 includes an operation key, a dial, a lever, or the like, whichreceive an operation input of a user, and outputs a control signalcorresponding to the operation input to the system controller 94.

In the imaging apparatus 90, the image signal, which corresponds to asignal charge that is sensed by the solid-state imaging device 1 and issubjected to a photoelectric conversion, is sequentially supplied to theA/D converting circuit 92 and is converted to a digital signal. Thisconverted digital signal is subjected to an image correction processingby the signal processing circuit 93, and is converted to a luminancesignal and a color difference signal to be output. The image data outputfrom the signal processing circuit 93 is supplied to a graphic interfacecircuit (not shown) and is finally converted to an image signal fordisplay, and therefore a camera through image is displayed on a monitor(not shown).

4. Other Configuration and Method of Manufacturing Solid-State ImagingDevice

Hereinafter, a modification of the solid-state imaging device will bedescribed.

First Modification

First, a solid-state imaging device 1A according to a first modificationwill be described with reference FIG. 5. FIG. 5 is a diagramillustrating a cross-sectional structure of the solid-state imagingdevice 1A according to the first modification. In the solid-stateimaging device 1A according to this modification, a film configurationof the first film and the second film that have a negative fixed chargeis made different with respect to the above-described solid-stateimaging device 1. In addition, in the following description, likereference numerals will be given to like parts having substantially thesame functions as the solid-state imaging device 1 shown in FIG. 1.

As shown in FIG. 5, in the solid-state imaging device 1A, a first film51 is formed on the effective region 21 of the semiconductor substrate2, and a second film 52 is formed on the OB region 22.

The first film 51 has a configuration in that a first layer 51 a formedon the semiconductor substrate 2 and a second layer 51 b formed on thefirst layer 51 a are laminated.

The first layer 51 a is formed of, for example, any one of a hafniumoxide film, an aluminum oxide film, a zirconium oxide film, a tantalumoxide film, and titanium oxide film, and is formed by the PVD method.

In addition, the second layer 51 b is formed of, for example, any one ofthe hafnium oxide film, the aluminum oxide film, the zirconium oxidefilm, the tantalum oxide film, and the titanium oxide film, and isformed by the ALD method or the MOCVD method.

In addition, the second film 52 has a configuration in that a firstlayer 52 c formed on the semiconductor substrate 2, a second layer 52 aformed on the first layer 52 c, and a third layer 52 b formed on thesecond layer 52 a are laminated.

The first layer 52 c is formed of, for example, any one of the hafniumoxide film, the aluminum oxide film, the zirconium oxide film, thetantalum oxide film, and the titanium oxide film, and is formed by theALD method or the MOCVD method.

In addition, the second layer 52 a is formed of, for example, any one ofthe hafnium oxide film, the aluminum oxide film, the zirconium oxidefilm, the tantalum oxide film, and the titanium oxide film, and isformed by the PVD method.

In addition, the third layer 52 b is formed of, for example, any one ofthe hafnium oxide film, the aluminum oxide film, the zirconium oxidefilm, the tantalum oxide film, and the titanium oxide film, and isformed by the ALD method or the MOCVD method.

As described above, the first film 51 has a lamination structure of twolayers, and the second film 52 has a lamination structure of threelayers. In this manner, in the solid-state imaging device 1A, the numberof layers of the first film 51 is different from the number of layers ofthe second film 52. In this embodiment, the number of layers of thefirst film 51 is smaller than the number of layers of the second film52.

Next, a method of manufacturing the solid-state imaging device 1Aaccording to this embodiment will be described. FIGS. 6A to 6E showdiagrams illustrating the method of manufacturing the solid-stateimaging device 1A. Here, processes of forming the first film 51 and thesecond film 52, which are characteristic configurations of the method ofmanufacturing the solid-state imaging device 1A according to thismodification, will be described, and like reference numerals will begiven to the other configurations and description thereof will beomitted.

First, as shown in FIG. 6A, a film 53 a having a negative fixed chargeis formed on the effective region 21 and the OB region 22 of thesemiconductor substrate 2 by the ALD method or the MOCVD method. As amaterial of the film 53 a having a negative fixed charge, for example,any one of a hafnium oxide, an aluminum oxide, a zirconium oxide, atantalum oxide, and a titanium oxide may be exemplified.

Next, as shown in FIG. 6B, a resist 40 is formed on the film 53 a thathas a negative fixed charge and is formed on the OB region 22, and thenwet-etching is performed. In this manner, as shown in FIG. 6C, the film53 a that is formed on the effective region 21 and has a negative fixedcharge is selectively removed, and thereby the first layer 52 c of thesecond film 52 is formed on the OB region 22.

Next, as shown in FIG. 6D, a film 54 having a negative fixed charge isformed on the semiconductor substrate 2 in the effective region 21 andon the first layer 52 c of the second film 52 by the PVD method. In thismanner, the first layer 51 a of the first film 51 is formed on thesemiconductor substrate 2 in the effective region 21, and the secondlayer 52 a is formed on the first layer 52 c of the second film 52. As amaterial of the film 54 having a negative fixed charge, for example, anyone of the hafnium oxide, the aluminum oxide, the zirconium oxide, thetantalum oxide, and the titanium oxide may be exemplified.

In addition, formation conditions in the case of the PVD method are asfollows. For example, pressure is set to 0.01 to 50 Pa, DC power is setto 500 to 2000 W, the flow rate of Ar is set to 5 to 50 sccm, and theflow rate of O₂ is set to 5 to 50 sccm.

Next, as shown in FIG. 6E, a film 55 having a negative fixed charge isformed on the film 54 having a negative fixed charge by the ALD methodor the MOCVD method. In this manner, the second layer 51 b is formed onthe first layer 51 a of the first film 51, and the third layer 52 b isformed on the second layer 52 a of the second film 52. As a material ofthe film 55 having a negative fixed charge, for example, any one of ahafnium oxide, an aluminum oxide, a zirconium oxide, a tantalum oxide,and a titanium oxide may be exemplified.

In addition, formation conditions in the case of the ALD method are asfollows. For example, the temperature of a formation substrate is set to200 to 500° C., the flow rate of a precursor is set to 10 to 500 sccm,the irradiation time is set to 1 to 15 seconds, and the flow rate of O₃is set to 10 to 500 sccm. The film thickness of the first film ispreferably 1 nm or more. In addition, in the case of forming the firstfilm by the ALD method, a silicon oxide film (the thickness thereof issubstantially 1 nm) may be formed on a surface of the semiconductorsubstrate 2.

When the second layer 51 b is formed on the first layer 51 a, the firstfilm 51 in which two layers 51 a and 51 b are laminated is configured.Due to this first film 51, the positive charge storage region 5 a isformed on a surface of the charge storage region 4 in the effectiveregion 21.

In addition, the second layer 52 a is formed on the first layer 52 c,and the third layer 52 b is formed on the second layer 52 a, such thatthe second film 52 in which the three layers 52 c, 52 a, and 52 b arelaminated is configured. Due to the second film 52, the positive chargestorage region 5 b is formed on a surface of the charge storage region 4in the OB region 22.

The first layer 51 a of the first film 51 and the second layer 52 a ofthe second film 52 are integrally formed by forming the film 54. Inaddition, the second layer 51 b of the first film 51 and the third layer52 b of the second film 52 are integrally formed by form the film 55.

Next, the insulation film 6, the light shielding film 7, theplanarization film 8, the color filters 9, and the on-chip lenses 10 areformed by the same processes as those described above, and thereby thesolid-state imaging device 1A shown in FIG. 5 may be manufactured.

FIG. 7 illustrate an amount of dark current with respect to the secondfilm 52 in a case where the second film 52 includes a first layer 52 cand a second layer 52 b, and in a case where the second film 52 includesthe first to third layers 52 c to 52 b like this modification. As shownin FIG. 7, it can be seen that the amount of dark current in the OBregion is small in a case where the second film 52 includes three layersof the first to third layers 52 c to 52 b.

On the other hand, since in the effective region, the semiconductorsubstrate 2 and the first layer 51 a formed by the PVD method come intocontact with each other, the amount of dark current increases comparedto a case where in the first film 51, the layer formed by the PVD methodis laminated on the layer formed by the ALD method. This is because thelayer formed by the PVD method is less dense compared to the layerformed by the ALD method or the like, such that a substance interruptingthe negative fixed charge, such as hydrogen may easily invade the layer.In the effective region, since the layer formed by the PVD method isformed at a position close to an interface of the semiconductorsubstrate 2, the amount of dark current increases compared to a casewhere the layer formed by the ALD method is laminated on thesemiconductor substrate 2.

Many dark currents occur in the OB region compared to the effectiveregion. Therefore, in the solid-state imaging device 1A according tothis modification, the amount of dark current that occurs in theeffective region is made to be increased by forming the first film 51,and the amount of dark current that occurs in the OB region is made tobe decreased by forming the second film 52. Therefore, it is possible tomake the difference (OB difference in level) between the amount of darkcurrent that occurs in the effective region and the amount of darkcurrent that occurs in the OB region small.

In addition, since the second layer 51 b of the first film 51 and thethird layer 52 b of the second film 52 are formed by the ALD method onthe first layer 51 a of the first film 51 and the second layer 52 a ofthe second film 52 that are formed by the PVD method, respectively, itis possible to suppress the invasion of material such as hydrogen thatinterrupts the negative fixed charge. This is because as describedabove, the layer formed by the ALD method or the like is denser than thelayer formed by the PVD method, such that it is difficult for thesubstance to invade the layer formed by the ALD method from the outside.

In addition, the first layer 51 a and the second layer 51 b of the firstfilm 51 may be substituted for each other. In this case, the secondlayer 51 b is formed on the semiconductor substrate 2 by the ALD methodor the MOCVD method, and the first layer 51 a is formed on the secondlayer 51 b by the PVD method. The second layer 51 b may be integrallythe first layer 52 c of the second film 52.

Second Modification

Next, a solid-state imaging device 1B according to a second modificationwill be described. FIG. 8 shows a diagram illustrating a configuration asolid-state imaging device according to this modification of the presentdisclosure. In the solid-state imaging device 1B according to thismodification, a film configuration of the film of the solid-stateimaging device 1B, which has the negative fixed charge, is changed, andlike reference numerals will be given to the other configurations anddescription thereof will be omitted.

As shown in FIG. 8, the solid-state imaging device 1B includes a firstfilm 61 on the effective region 21 and a second film 62 on the OB region22 of the semiconductor substrate 2.

The first film 61 has a configuration in which a first layer 61 a formedon the semiconductor substrate 2, a second layer 61 b formed on thefirst layer 61 a, and a third layer 61 c formed on the second layer 61 bare laminated.

The first layer 61 a is formed of, for example, any one of the hafniumoxide film, the aluminum oxide film, the zirconium oxide film, thetantalum oxide film, and the titanium oxide film, and is formed by theALD method or the MOCVD method.

In addition, the second layer 61 b is formed of, for example, any one ofthe hafnium oxide film, the aluminum oxide film, the zirconium oxidefilm, the tantalum oxide film, and the titanium oxide film, and isformed by the PVD method.

The third layer 61 c is formed of, for example, any one of the hafniumoxide film, the aluminum oxide film, the zirconium oxide film, thetantalum oxide film, and the titanium oxide film, and is formed by theALD method or the MOCVD method.

The second film 62 includes a first layer 62 c formed on thesemiconductor substrate 2. The first layer 62 c is formed of, forexample, any one of the hafnium oxide film, the aluminum oxide film, thezirconium oxide film, the tantalum oxide film, and the titanium oxidefilm, and is formed by the ALD method or the MOCVD method.

Next, a method of manufacturing the solid-state imaging device 1B willbe described with reference to FIGS. 9A to 9E. Here, processes offorming the first film 61 and the second film 62, which arecharacteristic configurations of the solid-state imaging device 1Baccording to this modification, will be described, and description ofthe other processes will be omitted.

First, as shown in FIG. 9A, a film 63 having a negative fixed charge isformed on the effective region 21 and the OB region 22 of thesemiconductor substrate 2 by the ALD method or the MOCVD method. As amaterial of the film 63 having a negative fixed charge, for example, anyone of a hafnium oxide, an aluminum oxide, a zirconium oxide, a tantalumoxide, and a titanium oxide may be exemplified.

Formation conditions in the case of the ALD method are as follows. Forexample, the temperature of a formation substrate is set to 200 to 500°C., the flow rate of a precursor is set to 10 to 500 sccm, theirradiation time is set to 1 to 15 seconds, and the flow rate of O₃ isset to 10 to 500 sccm. The film thickness of the first film ispreferably 1 nm or more. In addition, in the case of forming the firstfilm by the ALD method, a silicon oxide film (the thickness thereof issubstantially 1 nm) may be formed on a surface of the semiconductorsubstrate 2.

Next, as shown in FIG. 9B, a film 64 having a negative fixed charge isformed on the film 63 having a negative fixed charge by the PVD method.As a material of the film 64 having a negative fixed charge, forexample, any one of a hafnium oxide, an aluminum oxide, a zirconiumoxide, a tantalum oxide, and a titanium oxide may be exemplified.

In addition, formation conditions in the case of the PVD method are asfollows. For example, pressure is set to 0.01 to 50 Pa, DC power is setto 500 to 2000 W, the flow rate of Ar is set to 5 to 50 sccm, and theflow rate of O₂ is set to 5 to 50 sccm.

Next, as shown in FIG. 9C, a resist 40 is formed on the film 64 that hasa negative fixed charge and is formed on the effective region 21 andthen wet-etching is performed. Therefore, two layers of the films 63 and64 that are formed above the OB region 22 and have a negative fixedcharge are selectively removed, and thereby the first layer 61 a and thesecond layer 61 b of the first film 61 are formed above the effectiveregion 21.

Next, as shown in FIG. 9E, a film 66 having a negative fixed charge isformed on the second layer 61 b of the first film 61 and thesemiconductor substrate 2 in the OB region 22 by the ALD method or theMOCVD method. In this manner, the third layer 61 c of the first film 61is formed, and the first layer 62 c of the second film 62 is formed onthe OB region 22 of the semiconductor substrate 2. As a material of thethird layer 61 c of the first film 61 and the first layer 62 c of thesecond film 62, for example, any one of the hafnium oxide, the aluminumoxide, the zirconium oxide, the tantalum oxide, and the titanium oxidemay be exemplified.

In addition, formation conditions in the case of the ALD method are asfollows. For example, the temperature of a formation substrate is set to200 to 500° C., the flow rate of a precursor is set to 10 to 500 sccm,the irradiation time is set to 1 to 15 seconds, and the flow rate of O₃is set to 10 to 500 sccm.

The second layer 61 b is formed on the first layer 61 a, and the thirdlayer 61 c is formed on the second layer 61 b, such that the first film61 in which three layers 61 a, 61 b, and 61 c are laminated isconfigured. Due to the first film 61, the positive charge storage region5 a is formed on a surface of the charge storage region 4 in theeffective region 21.

In addition, due to the second film 62 including the first layer 62 c,the positive charge storage region 5 b is formed on a surface of thecharge storage region 4 in the OB region 22.

The third layer 61 c of the first film 61 and the first layer 62 c ofthe second film 62 are integrally formed by forming the film 66.

Next, the insulation film 6, the light shielding film 7, theplanarization film 8, the color filters 9, and the on-chip lenses 10 areformed by the same processes as those described above, and thereby thesolid-state imaging device 1B shown in FIG. 8 is manufactured.

FIG. 10 is a diagram illustrating an amount of dark current in a casewhere the second film 62 of the solid-state imaging device 1B isconfigured by a lamination structure of two layers including a layerformed by the ALD method and a layer formed by the PVD method, and in acase where the second film 62 includes one layer of the first layer 62 cformed by the ALD method. As shown in FIG. 10, it can be seen that theamount of dark current in the OB region is small in a case where thesecond film 62 includes one layer (single layer) like this modificationrather than two layers.

Since the layer formed by the PVD method is less dense compared to thelayer formed by the ALD method, it may be liable to include hydrogen orthe like that interrupts the negative fixed charge. Similarly to thismodification, when the second film 62 is configured to include the layerformed by the ALD method without including the layer formed by the PVDmethod, it is difficult for a substance such as hydrogen interruptingthe negative fixed charge to invade the layer formed by the ALD method.Therefore, it is possible to make the density of the negative fixedcharge in the second film 62 of the solid-state imaging device 1B high,and therefore a negative bias effect increases, and the dark current maybe ameliorated.

In this manner, it is possible to make the difference (OB difference inlevel) between the amount of dark current in the effective region andthe amount of dark current in the OB region small by reducing the amountof dark current of the second film 62 that is formed in the OB region inwhich many dark currents occur.

According to the solid-state imaging device 1A having theabove-described configuration, a temperature characteristic of the OBdifference in level is improved. That is, even when the temperature ofthe semiconductor substrate increases, the deterioration of the OBdifference in level is suppressed.

Finally, the description of the respective embodiments is an example ofthe present disclosure, and the present disclosure is not limited to theabove-described embodiments. Even when it is deviated from theabove-described respective embodiments, various modifications may bemade by design or the like without departing from the scope of thepresent disclosure.

What is claimed is:
 1. A solid-state imaging device comprising: asemiconductor substrate having an effective region in which a photodiodeperforming a photoelectric conversion is formed and, an optical blackregion shielded by a light shielding film; a first film which is formedon the effective region and which includes one or more layers; and asecond film which is formed on the optical black region and whichincludes one or more layers, wherein the number of layers formed in thefirst film is different from the number of layers formed in the secondfilm.
 2. The solid-state imaging device according to claim 1, whereinthe first film includes, a first layer that is formed on thesemiconductor substrate using an atomic layer vapor deposition method ora metal organic chemical vapor deposition method, a second layer that isformed on the first layer using the atomic layer vapor deposition methodor the metal organic chemical vapor deposition method, and a third layerthat is formed on the second layer using a physical vapor deposition,and wherein the second film includes, a first layer that is formed onthe semiconductor substrate using the atomic layer vapor depositionmethod or the metal organic chemical vapor deposition method, and asecond layer that is formed on the first layer using the physical vapordeposition.
 3. The solid-state imaging device according to claim 1,wherein the first film includes, a first layer that is formed on thesemiconductor substrate using an atomic layer vapor deposition method ora metal organic chemical vapor deposition method, and a second layerthat is formed on the first layer using a physical vapor deposition, andwherein the second film includes, a first layer that is formed on thesemiconductor substrate using the atomic layer vapor deposition methodor the metal organic chemical vapor deposition method, a second layerthat is formed on the first layer using the physical vapor deposition,and a third layer that is formed on the second layer using the atomiclayer vapor deposition method or the metal organic chemical vapordeposition method.
 4. The solid-state imaging device according to claim1, wherein the first film includes, a first layer that is formed on thesemiconductor substrate using an atomic layer vapor deposition method ora metal organic chemical vapor deposition method, a second layer that isformed on the first layer using a physical vapor deposition, and a thirdlayer that is formed on the second layer using the atomic layer vapordeposition method or the metal organic chemical vapor deposition method,and wherein the second film includes, a first layer that is formed onthe semiconductor substrate using the atomic layer vapor depositionmethod or the metal organic chemical vapor deposition method.
 5. Thesolid-state imaging device according to claim 1, wherein the layersmaking up the first film and the second film are formed of any one of ahafnium oxide film, an aluminum oxide film, a zirconium oxide film, atantalum oxide film, and a titanium oxide film.
 6. The solid-stateimaging device according to claim 1, wherein the first film includes atleast two layers, and wherein the at least two layers are laminated, andwherein the second film includes at least two layers, and wherein the atleast two layers are laminated.
 7. An imaging apparatus comprising: thesolid-state imaging device according to claim 1; an optical system thatimages an image of a subject on the solid-state imaging device; adriving unit that generates a driving pulse that allows the solid-stateimaging device to operate; and a signal processing circuit thatprocesses an output image signal from the solid-state imaging device. 8.A method of manufacturing a solid-state imaging device, the methodcomprising: forming an effective region in which a photodiode performinga photoelectric conversion is formed, and an optical black regionshielded by a light shielding film in a semiconductor substrate; forminga first film on the effective region, wherein the first film includesone or more layers; and forming a second film on the optical blackregion, wherein the second film includes one or more layers, and whereinthe number of layers included in the second film is different from thenumber of layers included in the first film.
 9. The method of claim 8,wherein the first film includes two or more laminated layers, andwherein the second film includes two or more laminated layers.